• Company
• About Us
• Process Capability - Technology Platforms
  • Diffusion/Deposition (6")
  • Diffusion, Thin Films & Implant
  • PECVD
  • Physical Vapour Deposition
  • PVD- Fab3
  • Implant (4" & 6" capability)
  • Dry Isotropic Etch
  • Wafer Bonding
  • Plasma Etch (6")
  • Photo Lithography
  • Metrology
  • Wet Chemical Etch
  • Deep Reactive Ion Etching (DRIE)
• Quality Assurance
• Who We Work With
• Board
• Business Team

Diffusion/Deposition (6")

• High temperature Diffusions up to 1275 °C (SiC furnaces)
• P-Type (BBr3) and N-Type (POCl3) furnace doping
• LPCVD doped (In situ doping option) and undoped polysilicon
• LPCVD standard and low stress Nitride process
• LPCVD TEOS (TMP + TMB dopants) process

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