• Company
• About Us
• Process Capability - Technology Platforms
  • Diffusion/Deposition (6")
  • Diffusion, Thin Films & Implant
  • PECVD
  • Physical Vapour Deposition
  • PVD- Fab3
  • Implant (4" & 6" capability)
  • Dry Isotropic Etch
  • Wafer Bonding
  • Plasma Etch (6")
  • Photo Lithography
  • Metrology
  • Wet Chemical Etch
  • Deep Reactive Ion Etching (DRIE)
• Quality Assurance
• Who We Work With
• Board
• Business Team

Diffusion, Thin Films & Implant

CMOS and Bipolar technologies fabrication on 4" wafers.

PiN diode processes with low leakage characteristics and Low Noise JFET processes are also fabricated.

• Diffusion up to 1250C (using SiC furnace tubes) with expertise on maintaining high bulk silicon lifetime during processing.
• P type (Boron) doping processes either by Boron Discs, BBR3 or Boron Implantation.
• N type (Phosphorous ,Arsenic and Antimony) doping processes either by furnace (phos only) or implant
• LPCVD polysilicon for gate electrodes, resistors (to 1000 ohms/sq), poly to poly capacitors,  trench fill, and sacrificial layers for MEMS. Low temperature option to ensure smooth surfaces.
• LPCVD Nitride for LOCOS, capacitor dielectrics, MEMS membranes and Masking layers
• PECVD (low temperature) Oxide, Oxynitride and Nitride for inter level dielectric (ILD), circuit passivation, stress controlled (tensile and compressive) for thin membrane MEMS applications, and as sacrificial layers for MEMS.

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