Diverse process portfolio...

Semefab is an experienced foundry and as such we are accustomed to developing, optimizing and inducting customer specific solutions in a timely and cost effective manner.

With an extensive process portfolio Semefab specializes in MEMS, CMOS, Opto-CMOS, Linear IC, BiCMOS, ASIC and Discrete semiconductor device technologies such as JFET, PIN diode,

RF MOSFET, FRD, Bipolar transistor. Integrated CMOS & MEMS fabrication can also be supported.

Fab 1 100mm wafers, MOS/BiPolar

Diffusion

Pre diffusion clean bench SP clean & FSI mercury automated RCA clean

High temp oxidation & anneal SiC to 1280C

Standard oxidation & anneal quartz to 1100C

LPCVD nitride deposition

LPCVD polysilicon deposition 500C & 620C

LPCVD LTO oxide 400C

Boron deposition BBr3 5-100 ohms/square

Phos deposition POCl3 5-50 ohms/square

Boron drive

Phos drive

Alloy N2/H2 450C

 

PVD/Metallization

PECVD nitride, oxide, oxynitride with stress control – Novellus Concept 1

Sputter, Al/1%Si, Al/1.0% Cu

 

Photolithography           

Spin Coat Bake/Resist Coat/Bake, Positive resist 1.0-4.0um – SVG tracks

Develop/Bake TMAH based – SVG tracks

Projection alignment – Perkin Elmer

Double sided alignment – Karl Suss

 

Ion Implant

Low current B11, P31, As75 26keV to 180 keV – Varian 350D 

High current high current , B11, P31, As75 40keV to 180 keV – Varian XP180 

 

Wet Etch

BOE oxide etches, wet metal etch

 

Dry Etch

Plasma poly & nitride etch – Tegal 901

Plasma oxide etch – Tegal 903 

Plasma oxide etch – LAM 590 

Deep Reactive ion etching of silicon – STS Pegasus

 

Resist strip

Fuming nitric, solvent strip, EKC – oxygen plasma resist strip – Matrix & Tegal.  

 

Metrology

Layer thicknesses – Nanospec

CD measurement – Nanoline

Sheet resistance measurement – RS55

Wafer bow measuring tool (Film stress compressive & tensile) – ADE 

600 Scan electron microscope – Cambridge Stereoscan 

Fab 2 100mm & 150mm wafers, MEMS

Diffusion

LPCVD polysilicon

Oxidation & anneal to 1250C

Alloy N2/H2 450C

 

PVD/Metallization

PECVD nitride, oxide, oxynitride with stress control – Novellus Concept 1 

Sputter, 3 target sputtering, Au,TiW, Ti, CuN, Al – MRC 

Evaporation, 4 crucible ebeam, Au, Ag, Ti, Ni, Cr, Pd, Ta, Pt – Balzers 

 

Photolithography

Contact/Proximity aligners – OAI & EVG 

Stepper 1.0 um – ASM 4500 

Bake/Coat/Bake resist & polyimide coat – SVG 

Develop, TMAH based – SVG 

 

Wet Etch

BOE Oxide etches, wet metal etch

KOH silicon etch

 

Dry Etch

Plasma poly & nitride etch – LAM 4420 

Plasma oxide etch – LAM 4520 

XeF2 vapour polysilicon & silicon etch – MEMSSTAR 

 

Resist strip

Solvent strip – EKC

Oxygen plasma resist strip – Matrix 

Lift off using NMP1165 ( Definition of metals eg Au, Ni, Ag etc )  

 

Wafer Bonding

Anodic/fusion/eutectic wafer bonding – EVG 520IS 

 

Metrology

CMT 4 pt probe-sheet resistance, step height measurement – Dektak

EDX capability – SEM

CD measurement – Nexiv 

Fab 3 150mm wafers, MOS/BiPolar

Diffusion

Pre-diffusion clean FSI mercury automated RCA clean

High temp oxidation & anneal SiC to 1280C

Standard oxidation & anneal quartz to 1100C

LPCVD nitride deposition

LPCVD polysilicon deposition 500C & 620C

LPCVD TEOS Oxide 700C

Boron deposition BBr3 5-100 ohms/square

Phos deposition POCl3 5-50 ohms /square

Boron drive

Phos drive

Alloy N2/H2 450C

 

PVD/Metallization

Sputter Al/1%Si, Al/1%Cu – Varian 3290 

PECVD nitride, oxide, oxynitride with stress control – Novellus Concept 1 

 

Photolithography

HMDS vapor prime

Spin Coat Bake/Resist Coat/Bake, Positive resist 1.0-4.0um – SVG track 

Develop/Bake TMAH based – SVG track 

Projection alignment – Perkin Elmer 

Stepper 0.7um – ASM 5500 

Double sided alignment – KS 

 

Wet Etch

BOE Oxide etches, wet metal etch

 

Dry Etch

Plasma poly & nitride etch – LAM 4420 

Plasma oxide etch – LAM 4520 

Plasma metal etch – LAM 9600 

Deep reactive ion etching of silicon – STS Pegasus

 

Resist Strip

Solvent resist strip – Nanostrip and EKC 

Oxygen plasma resist strip – Tegal 915 

 

Ion Implant

Low current B11, P31, As75 26keV to 180 keV – Varian 350D 

Hiigh current , B11, P31, As75 40keV to 180 keV – Varian XP180 

 

Metrology

CD measurement – Nanoline 

CD SEM – Hitachi 

Layer thickness measurement – Nanospec 

Particle measurement – Tencor 7600